产品特性:原厂原装 | 品牌:华瑞微 | 型号:HRT30P13J |
封装:DFN3*3_8L | 批号:2021 | FET类型:直电流 |
漏源电压(Vdss):5 | 漏极电流(Id):5 | 漏源导通电阻(RDS On):5 |
栅源电压(Vgs):5 | 栅极电荷(Qg):5 | 反向恢复时间:5 |
最大耗散功率:5mW | 配置类型:5 | 工作温度范围:5 |
安装类型:5 | 应用领域:汽车电子、 安防设备、 医疗电子、 测量仪器、 智能家居、 家用电器、 照明电子、 可穿戴设备、 新能源 |
华瑞微HRT30P13J 30V DFN3*3_8L
规格书:
P-Channel Power MOSFET designed by HR-Micro
Semiconductor Company,according to the advanced Trench
Technology.This devices provide an excellent Gate charge and
Rds(on),which leads to extremely communication and
conduction losses .So it is very suitable for AC/DC power
conversion, Lighting, and industrial power applications.The
package form is DFN3*3_8L which accords with the RoHS
standard.